Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-08
2005-03-08
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S004000, C257S508000, C257S489000, C257S750000, C257S751000, C257S761000, C257S762000
Reexamination Certificate
active
06864521
ABSTRACT:
A method for controlling silver doping of a chalcogenide glass in a resistance variable memory element is disclosed herein. The method includes forming a thin metal containing layer having a thickness of less than about 250 Angstroms over a second chalcogenide glass layer, formed over a first metal containing layer, formed over a first chalcogenide glass layer. The thin metal containing layer preferably is a silver layer. An electrode may be formed over the thin silver layer. The electrode preferably does not contain silver.
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Campbell Kristy A.
Gilton Terry L.
Moore John T.
Dickstein , Shapiro, Morin & Oshinsky, LLP
Jackson Jerome
Micro)n Technology, Inc.
Nguyen Joseph
LandOfFree
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