Method for forming metal lines

Details Method for forming metal lines Method for forming metal lines

2005-07-26

2005-07-26

Potter, Roy (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S641000, C438S652000

Reexamination Certificate

active

06921717

ABSTRACT:
Disclosed is a method for forming metal lines, which comprises the following steps of: preparing a semiconductor substrate having a lower metal line; successively forming a polymer dielectric film and an oxide film on the substrate, the polymer dielectric film and the oxide film having a contact for exposing a predetermined portion of the lower metal line; dry cleaning a resultant structure according to a remote plasma mechanism to remove the metal oxide film from the surface portion of the lower metal line exposed via the contact and to form a protective film on a lateral portion of the polymer dielectric film; and embedding a metal film functioning as an upper metal line in a contact structure.

REFERENCES:
patent: 4804490 (1989-02-01), Pryor et al.
patent: 4845533 (1989-07-01), Pryor et al.
patent: 6077733 (2000-06-01), Chen et al.
patent: 6124681 (2000-09-01), Choi

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