Patterning semiconductor layers using phase shifting and...

Details Patterning semiconductor layers using phase shifting and... Patterning semiconductor layers using phase shifting and...

2005-04-19

2005-04-19

Thompson, Craig A. (Department: 2813)

Computer-aided design and analysis of circuits and semiconductor

Nanotechnology related integrated circuit design

C257S626000

Reexamination Certificate

active

06883159

ABSTRACT:
A photomask and method of patterning a photosensitive layer using a photomask, the photomask including a substrate and a film coupled to substrate. The film is etched with a phase shifted assist feature, a low aspect ratio assist feature or phase shifted low aspect primary features.

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patent: 1 174 764 (2002-01-01), None
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Peterson, John S. “Analytical Description of Anti-scattering and Scattering Bar Assist Features” Optical Micolithography XIII, vol. 4000. Society of Photo-Optical Instrumentation Engineers. 2000. <<http://www.advlitho.com/content/Papers/4000-08.pdf>>.*
Kroyan, A., et al., “Effects of Sub-Resolution Assist Features on Depth of Focus and Uniformity of Contact Windows for 193 nm Lithography”,Proc. of the SPIE, vol. 3679, pt. 1-2, pp. 630-638 (1999).

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