Method of forming an intermetal dielectric layer

Details Method of forming an intermetal dielectric layer Method of forming an intermetal dielectric layer

2005-07-12

2005-07-12

Nguyen, Ha Tran (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S639000, C438S692000

Reexamination Certificate

active

06916736

ABSTRACT:
A method of forming an intermetal dielectric (IMD) layer. At least one metal wire is formed on a substrate. A filling oxide layer is formed on the substrate and the metal wire. The surface of the filling oxide layer is smoothed. A first silicon-rich oxide layer is formed on the filling oxide layer, where the refractive index (RI) of the first silicon-rich oxide layer is 1.6˜1.64. A second silicon-rich oxide layer is formed on the first silicon-rich oxide layer, where the refractive index of the second silicon-rich oxide layer is 1.49˜1.55. According to the present method, the diffusion of mobile hydrogen ions is blocked by manufacture with dual silicon-rich oxide layers.

REFERENCES:
patent: 5252515 (1993-10-01), Tsai et al.
patent: 5403780 (1995-04-01), Jain et al.
patent: 6077784 (2000-06-01), Wu et al.
patent: 6281116 (2001-08-01), Yanagida
patent: 87111392 (1999-12-01), None

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