Method to reduce dishing and erosion in a CMP process

Details Method to reduce dishing and erosion in a CMP process Method to reduce dishing and erosion in a CMP process

2005-07-19

2005-07-19

Blum, David S. (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S754000

Reexamination Certificate

active

06919276

ABSTRACT:
A CMP process for selectively polishing an overlying material layer with an underlying layer comprising at least one material in a semiconductor device fabrication process including providing a semiconductor wafer process surface including a first material layer overlying a second layer including one material; mixing at least two slurry mixtures including a first CMP slurry formulation optimized for removing the first material layer and a second CMP slurry formulation optimized for removing the at least a second layer to form a slurry formulation mixture; and, carrying out a CMP process using the slurry formulation mixture to remove the first material layer and at least a portion of the at least a second layer.

REFERENCES:
patent: 6780773 (2004-08-01), Li et al.
patent: 6783432 (2004-08-01), Li et al.
Stanley Wolf Silicon Processing for the VSLI Era vol. 4 lattice Press 2002 pp. 738-739.

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