Semiconductor device and process of producing the same

Details Semiconductor device and process of producing the same Semiconductor device and process of producing the same

1992-08-17

1994-08-30

Reynolds, Bruce A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

29 2542, 4271263, H01G 410, H01G 700, B05D 512

Patent

active

053433530

ABSTRACT:
A microminiature, large capacitor for a semiconductor memory is formed from a raw material compound of plural different kinds of metal atoms for deposition, irrespective of the material, temperature and surface condition of a substrate, thereby forming a thin dielectric film having uniform characteristics not affected by the interface even though the film is made as thin as approximately 0.1 .mu.m. The microminiature large capacitance capacitor has a capacitance unaffected by an oxide existing at the interface between a ferroelectric and electrodes without using precious metals such as platinum having the least degree of freedom in deposition of thin films and microminiature processing. The ferroelectric thin film is deposited using an organic metal comprising a plurality of kinds of metal elements in conformity with the composition of a desired dielectric. As electrodes for use in forming a capacitor, a substance exhibiting conductivity after oxidation is preferably employed.

REFERENCES:
patent: 4872086 (1989-10-01), Huang et al.
patent: 4931427 (1990-06-01), Chien
patent: 4982309 (1991-01-01), Shepard
patent: 5028455 (1991-07-01), Miller et al.
patent: 5138401 (1992-08-01), Yamazaki
patent: 5198269 (1993-03-01), Swartz et al.
"Preparation of Ferroelectric Compounds," J. Fukushima, et al., Journal of Materials Science, 19 (1984) pp. 595-598.
Japanese Journal of Applied Physics, vol. 28, No. 6, Jun. 9, pp. 1030-1034, "Preparation of c-Axis-Oriented PbTi03 Thin Films by MOCVD Under Reduced Pressure", Okada et al.
Journal of Applied Physics, vol. 48, No. 7, Jul. 1977, pp. 2905-2909, "Some Electrical and Optical Properties of Ferroelectric Lead-Zirconate-Lead-Titanate Thin Films", Okada et al.
Journal of Applied Physics, vol. 64(5), Sep. 1, 1988, pp. 2717-2724, "Preparation of Pb(Zr,Ti)03 Thin Films by Sol Gel Processing: Electrical, Optical, and Electro-Optic Properties", Yi et al.
Applied Physics Letters, 56(24), Jun. 11, 1990, pp. 2399-2401, "Observations of Ferroelectric Polarization Reversal in Sol-Gel Processed Very Thin Lead-Zirconate-Titanate Films", Sanches et al.

Affiliated with

Also associated with

Rating

Semiconductor device and process of producing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and process of producing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and process of producing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-33794