Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2005-04-12
2005-04-12
Nguyen, Viet Q. (Department: 2818)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S158000, C365S161000, C365S063000, C365S225500, C365S232000
Reexamination Certificate
active
06879516
ABSTRACT:
This invention relates to an MRAM array architecture which incorporates certain advantages from both cross-point and 1T-1MTJ architectures during reading operations. The fast read-time and higher signal to noise ratio of the 1T-1MTJ architecture and the higher packing density of the cross-point architecture are both exploited by using a single access transistor to control the reading of multiple stacked columns of MRAM cells each column being provided in a respective stacked memory layer.
REFERENCES:
patent: 6373753 (2002-04-01), Proebsting
patent: 6680863 (2004-01-01), Shi et al.
patent: 6756652 (2004-06-01), Yano et al.
patent: 6778434 (2004-08-01), Tsuji
patent: 6829188 (2004-12-01), Baker
patent: 20010012228 (2001-08-01), Perner
patent: 20010038548 (2001-11-01), Perner et al.
patent: 20040032760 (2004-02-01), Baker
patent: 20040057276 (2004-03-01), Nejad et al.
patent: 20040165421 (2004-08-01), Nejad et al.
patent: 20040165461 (2004-08-01), Nejad et al.
patent: 02002170376 (2002-06-01), None
patent: WO 000241321 (2002-05-01), None
How Magnetic RAM Will Work <http://www.howstuffworks.com/mram2.htm>.
MTJ Based MRAM System Design <http://www.aps.org/meet/MAR01/baps/abs/S2550004.html>.
Motorola Demonstrates Revolutionary Memory Technology <http://www.apspg.com/press/060100/mram-final.html>.
Computing Unplugged <http://www.research.ibm.com/thinkresearch/pages/2001/20010202_mram.shtml>.
Magnetic Tunnel Junction Materials for Electronic Applications <http://www.tms.org/pubs/journals/JOM/0006/Slaughter/Slaughter-0006.html>.
Magneto-Electronics: Magnetic Tunnel Junctions <http://www.almaden.ibm.com/st/projects/magneto/mtj/>.
Nejad Hasan
Seyyedy Mirmajid
Dickstein , Shapiro, Morin & Oshinsky, LLP
Micro)n Technology, Inc.
Nguyen Viet Q.
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