Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Combined with the removal of material by nonchemical means
Reexamination Certificate
2005-09-27
2005-09-27
Chambliss, Alonzo (Department: 2814)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Combined with the removal of material by nonchemical means
C438S781000
Reexamination Certificate
active
06949473
ABSTRACT:
A method and system for identifying and/or removing an oxide-induced dead zone in a VCSEL structure is disclosed herein. In general, a VCSEL structure can be formed having at least one oxide layer and an oxide-induced dead zone thereof. A thermal annealing operation can then be performed upon the VCSEL structure to remove the oxide-induced dead zone, thereby permitting oxide VCSEL structures thereof to be reliably and consistently fabricated. An oxidation operation may initially be performed upon the VCSEL structure to form the oxide layer and the associated oxide-induced dead zone. The thermal annealing operation is preferably performed upon the VCSEL after performing a wet oxidation operation upon the VCSEL structure.
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Biard James R.
Guenter James K.
Chambliss Alonzo
Finisar Corporation
Workman Nydegger
LandOfFree
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