Semiconductor device having noise immunity

Details Semiconductor device having noise immunity Semiconductor device having noise immunity

2005-01-04

2005-01-04

Lee, Eddie (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S368000

Reexamination Certificate

active

06838736

ABSTRACT:
A semiconductor device, including a dummy diffused layer in the upper part of a substrate, has its noise immunity improved. The dummy diffused layer is formed between analog and digital blocks to eliminate dishing, which usually occurs during a CMP process for defining STI regions. The surface of the dummy diffused layer is covered with an anti-silicidation film at least partially and a dummy gate electrode so as not to be silicided. The dummy gate electrode can be formed along with a normal gate electrode for a transistor. Accordingly, there is no need to add any extra process step to the fabrication process.

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S. Wolf. 1990. Lattice Press, vol. 2, pp. 17-50.

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