Method of forming ruthenium and ruthenium oxide films on a...

Details Method of forming ruthenium and ruthenium oxide films on a... Method of forming ruthenium and ruthenium oxide films on a...

2005-01-18

2005-01-18

Meeks, Timothy (Department: 1762)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S686000, C438S758000, C438S778000, C427S252000, C427S255310

Reexamination Certificate

active

06844261

ABSTRACT:
A method is provided for forming a film of ruthenium or ruthenium oxide to the surface of a substrate by employing the techniques of chemical vapor deposition to decompose ruthenium precursor formulations. The ruthenium precursor formulations of the present invention include a ruthenium precursor compound and a solvent capable of solubilizing the ruthenium precursor compound. A method is further provided for making a vaporized ruthenium precursor for use in the chemical vapor deposition of ruthenium and ruthenium-containing materials onto substrates, wherein a ruthenium precursor formulation having a ruthenium-containing precursor compound and a solvent capable of solubilizing the ruthenium-containing precursor compound is vaporized.

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