Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-01-25
2005-01-25
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S068000, C257S069000, C257S071000, C257S298000, C257S306000, C257S906000
Reexamination Certificate
active
06847075
ABSTRACT:
A semiconductor integrated circuit apparatus having a planar capacitor can use a plurality of source voltages therein. According to the semiconductor integrated circuit apparatus, it is possible to not only control thresholds of individual MOS transistors but also reduce the threshold voltage of the planar capacitor without any additional fabrication process. The semiconductor integrated circuit apparatus includes a p-channel memory transistor and a capacitor in a first n-type element region, an n-channel low-voltage MOS transistor in a second p-type element region, and an n-channel high-voltage MOS transistor in a third p-type element region. A channel region of the second MOS transistor is doped under a high density profile by using a p-type impurity element. At the same time, the p-type impurity element is imported in a capacitor region of the first element region under the substantially same profile.
REFERENCES:
patent: 5986314 (1999-11-01), Seshadri et al.
Huynh Andy
Nelms David
Westerman Hattori Daniels & Adrian LLP
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