Method of forming gas dielectric with support structure

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S624000, C438S634000, C438S639000

Reexamination Certificate

active

06875685

ABSTRACT:
A method for forming a gas dielectric with support structure on a semiconductor device structure provides low capacitance and adequate support for a conductor of the semiconductor device structure. A conductive structure, such as via or interconnect, is formed in a wing-layer dielectric. A support is then formed that connects to the conductive structure, the support including an area thereunder. The wiring-layer dielectric is then removed from the area to form a gas dielectric.

REFERENCES:
patent: 3890636 (1975-06-01), Harada et al.
patent: 5144411 (1992-09-01), Kaanta et al.
patent: 5148260 (1992-09-01), Inoue et al.
patent: 5413962 (1995-05-01), Lur et al.
patent: 5641711 (1997-06-01), Cho
patent: 5759913 (1998-06-01), Fulford, Jr. et al.
patent: 6111199 (2000-08-01), Wyland et al.
patent: 6171971 (2001-01-01), Natzle
patent: 6184121 (2001-02-01), Buchwalter et al.
patent: 6265321 (2001-07-01), Chooi et al.
patent: 6303487 (2001-10-01), Kagamihara
patent: 6307265 (2001-10-01), Anand et al.
patent: 6429522 (2002-08-01), Petrarca et al.
patent: 20010014526 (2001-08-01), Clevenger et al.
patent: 20020047207 (2002-04-01), Sekiguchi
patent: 20030022481 (2003-01-01), Nakagawa et al.
patent: 20030073302 (2003-04-01), Huibers
patent: 20040063305 (2004-04-01), Kloster et al.
patent: 20040099951 (2004-05-01), Park et al.
patent: 20040102031 (2004-05-01), Kloster et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of forming gas dielectric with support structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming gas dielectric with support structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming gas dielectric with support structure will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3373776

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.