Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-04-05
2005-04-05
Smoot, Stephen W. (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S624000, C438S634000, C438S639000
Reexamination Certificate
active
06875685
ABSTRACT:
A method for forming a gas dielectric with support structure on a semiconductor device structure provides low capacitance and adequate support for a conductor of the semiconductor device structure. A conductive structure, such as via or interconnect, is formed in a wing-layer dielectric. A support is then formed that connects to the conductive structure, the support including an area thereunder. The wiring-layer dielectric is then removed from the area to form a gas dielectric.
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Furukawa Toshiharu
Hakey Mark C.
Horak David V.
Koburger, III Charles W.
Mitchell Peter H.
Canale Anthony J.
Hoffman Warnick & D'Alessandro LLC
Smoot Stephen W.
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