Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

2005-07-26

2005-07-26

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S407000, C257S412000, C327S053000, C327S066000

Reexamination Certificate

active

06921949

ABSTRACT:
A semiconductor integrated circuit device is comprised of an amplifier circuit having first and second PMOS and NMOS transistors. The first PMOS transistor has a gate electrode and a drain electrode connected together. The second PMOS transistor has a gate electrode connected to the gate electrode of the first PMOS transistor and a course electrode connected to a course electrode of the first PMOS transistor. The first NMOS transistor has a drain electrode connected to the drain electrode of the first PMOS transistor and a gate electrode sat as a first input terminal. The second NMOS transistor has a drain electrode connected to a drain electrode of the second PMOS transistor, a source electrode connected to a sourse electrode of the first NMOS transistor, and a gate electrode sat as a second input terminal. At least one of the first NMOS transistor and the second NMOS transistor is comprised of a buried channel transistor.

REFERENCES:
patent: 4618785 (1986-10-01), van Tran
patent: 2002/0151129 (2002-10-01), Yoshida et al.
patent: 2004/0124463 (2004-07-01), Harada et al.

Affiliated with

Also associated with

Rating

Semiconductor integrated circuit device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor integrated circuit device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3373419