Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-07-26
2005-07-26
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S330000, C257S347000
Reexamination Certificate
active
06921942
ABSTRACT:
There is provided a semiconductor device structured so as to be mounted jointly with other devices on one chip, and capable of controlling a large current in spite of a small device area while having small on-resistance, thereby enabling a high voltage resistance to be obtained. In the case of NLDMOS, the semiconductor device comprises an N well layer, formed on a p-type semiconductor substrate, a P well layer formed in the N well layer, a source electrode formed in a source trench cavity within the P well layer, a gate electrode formed in at least one of gate trench cavities within the P well layer, through the intermediary of an oxide film, and a drain electrode formed in a drain trench cavity within the N well layer, and further, N+ diffused layers are formed, around the source trench cavity, the drain trench cavity, respectively.
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Ngo Ngan V.
Oki Electric Industry Co. Ltd.
Volentine Francos & Whitt PLLC
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