Substrate and method for producing the same, and thin film...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive

Reexamination Certificate

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C438S762000

Reexamination Certificate

active

06900071

ABSTRACT:
A substrate is provided with a substrate main body made from silicon, and an oxide film for a base formed thereon. The oxide film includes a first oxide film made mainly of a thermal SiO2film formed by thermally oxidizing silicon in the substrate main body, and a second oxide film made of a high-temperature oxide film deposited and formed thereon. Alternatively the second oxide film may be formed by TEOS.

REFERENCES:
patent: 5663077 (1997-09-01), Adachi et al.
patent: 6156586 (2000-12-01), Kolb
patent: 6634232 (2003-10-01), Rettig et al.
patent: 2338750 (1999-09-01), None
patent: 55-9449 (1980-01-01), None
patent: 1-173635 (1989-07-01), None
patent: 08-45933 (1996-02-01), None
patent: 09-36387 (1997-02-01), None
patent: 10-214815 (1998-08-01), None
patent: 2001-36078 (2001-02-01), None
Wolf, “Silicon Processing for the VLSI Era”, 1986, pp. 182-188, 198-200.

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