Methods of fabricating silicide pattern structures

Details Methods of fabricating silicide pattern structures Methods of fabricating silicide pattern structures

2005-04-19

2005-04-19

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S649000, C438S651000, C438S655000, C438S664000, C438S682000

Reexamination Certificate

active

06881663

ABSTRACT:
Silicide interfaces for integrated circuits, thin film devices, and back-end integrated circuit testing devices are formed using a barrier layer, such as titanium nitride, disposed over a porous, thin dielectric layer which is disposed between a silicon-containing substrate and a silicidable material which is deposited to form the silicide interfaces for such devices. The barrier layer prevents the formation of a silicide material within imperfections or voids which form passages through the thin dielectric layer when the device is subjected to a high-temperature anneal to form the silicide contact from the reaction of the silicidable material and the silicon-containing substrate.

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