Method of forming a crystalline phase material

Details Method of forming a crystalline phase material Method of forming a crystalline phase material

2005-04-26

2005-04-26

Chaudhari, Chandra (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S649000, C438S651000, C438S682000

Reexamination Certificate

active

06884716

ABSTRACT:
Methods of forming an electrically conductive line include providing a stress inducing material within or a compressive stress inducing layer operatively adjacent a crystalline material of a first crystalline phase. In addition, such methods include annealing the crystalline material of the first crystalline phase under conditions effective to transform it to a second crystalline phase. Some methods also include providing stress inducing materials into a refractory metal layer. Example compressive stress inducing layers include SiO2and Si3N4, while example stress inducing materials include Ge, W and Co. Where the compressive stress inducing material is provided on the same side of a wafer over which the crystalline phase material is provided, it is provided to have a thermal coefficient of expansion which is less than the first phase crystalline material. Example and preferred crystalline phase materials having two phases are refractory metal silicides, such as TiSix.

REFERENCES:
patent: 4337476 (1982-06-01), Fraser et al.
patent: 4378628 (1983-04-01), Levinstein et al.
patent: 4568565 (1986-02-01), Gupta et al.
patent: 4897368 (1990-01-01), Kobushi et al.
patent: 4971655 (1990-11-01), Stefano et al.
patent: 5240739 (1993-08-01), Doan et al.
patent: 5376405 (1994-12-01), Doan et al.
patent: 5470794 (1995-11-01), Anjum et al.
patent: 5593924 (1997-01-01), Apte et al.
patent: 5608266 (1997-03-01), Agnello et al.
patent: 5665646 (1997-09-01), Kitano
patent: 5739573 (1998-04-01), Kawaguchi
patent: 5828131 (1998-10-01), Cabral, Jr. et al.
patent: 5874351 (1999-02-01), Hu et al.
patent: 6054387 (2000-04-01), Fukuda
patent: 6090708 (2000-07-01), Sandhu et al.
patent: 6376372 (2002-04-01), Paranjpe et al.
patent: 8139056 (1996-05-01), None
Ilderem, V., et al., “Optimized Deposition Parameters for Low Pressure Chemical Vapor Deposited Titanium Silicide”,Massachusetts Institute of Technology,vol. 135, No. 10, pp. 2590-2596 (Feb. 1988).
Nagabushnam, R. V., et al., “Kinetics and Mechanism of the C49 to C54 Titanium Disilicide Phase Transformation Formation in Nitrogen Ambient”, 5 Pages (Nov. 1995).
Huang, et al. The Influence of Ge-Implantation on the Electrical Characteristics of the Ultra-Shallow . . . IEEE Electron Device Letters, vol. 17, No. 3, March 1996, pp. 88-90.
M. Ali Omar, “Elementary Solid State Physics” © 1975 by Addison-Wesley Publishing Company, Inc., pp. 539-542.
Wolf, et al., “Silicon Processing for the VLSI Era—vol. 1-Process Technology”, ©1986 by Lattice Press pp. 242, 261, 262, 303 and 304.
Ma et al., “Manipulation of the Ti/Si Reaction Paths by Introducing an Amorphous Ge Interlayer”, 4thInternational Conference on Solid-State and Integrated Circuit Technology Proceedings, 1995, pp 35-37.

Affiliated with

Also associated with

Rating

Method of forming a crystalline phase material does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a crystalline phase material, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a crystalline phase material will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3370185