Semiconductor device with region that changes depth across...

Details Semiconductor device with region that changes depth across... Semiconductor device with region that changes depth across...

2005-04-12

2005-04-12

Loke, Steven (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S492000, C257S493000, C257S592000

Reexamination Certificate

active

06878998

ABSTRACT:
N+-type diffusion regions, P-type diffusion region and others are formed at and near a surface of an N−-type epitaxial layer on a p-type silicon substrate. Gate electrode portions are formed on P-type diffusion region located between N−-type diffusion regions and N−-type epitaxial layer with a gate insulating film therebetween. A source electrode and a drain electrode are formed. Under a field isolating film, a P-type diffusion region is formed discretely in a direction crossing a direction of a current flow in the on state. Thereby, such a semiconductor device is obtained that rising of an on resistance can be suppressed in an on state while keeping an effect of reducing an electric field.

REFERENCES:
patent: 5432370 (1995-07-01), Kitamura et al.
patent: 61-207066 (1986-09-01), None
patent: 7-130996 (1995-05-01), None
“Semiconductor devices—Physics and Technology” by Sze, 1985, P, 70-83.

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