Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-01-04
2005-01-04
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S424000
Reexamination Certificate
active
06838374
ABSTRACT:
To suppress oxidation of the inner walls of element isolation grooves otherwise occurring during thermal oxidation processes, a nitrogen introducing layer, that has a lower diffusion coefficient relative to an oxidizing agent, is formed at the surface portion of a silicon oxide film buried within an element isolation groove. This nitrogen introduced layer functions as a barrier layer for precluding the oxidizer (such as oxygen, water or the like) in vapor phase from diffusing into the silicon oxide film during thermal processing steps. The nitrogen introduced layer is formed by performing nitrogen ion implantation into the entire surface of a substrate and subsequently applying thermal processing to the substrate to thereby activate the nitrogen that has been doped.
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Kato Masataka
Kubo Masaharu
Meguro Satoshi
Miura Hideo
Suzuki Norio
Antonelli Terry Stout & Kraus LLP
Le Thao P.
Nelms David
Renesas Technology Corp.
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