Semiconductor device with non-compounded contacts, and...

Details Semiconductor device with non-compounded contacts, and... Semiconductor device with non-compounded contacts, and...

2005-03-29

2005-03-29

Jackson, Jerome (Department: 2815)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

C438S522000, C438S537000, C438S573000, C438S580000

Reexamination Certificate

active

06872644

ABSTRACT:
A semiconductor device includes source and drain contact regions which include a non-compounded combination of a semiconductor material and at least one metal. The metal may include an elemental metal, such as gold or aluminum, or may include an intermetallic. The contact regions may be formed by depositing a limited amount of the at least one metal on a source and a drain of the device, and annealing the device to induce diffusion of the at least one metal into the source and drain. The annealing time and temperature may be selected to limit diffusion of the at least one metal.

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