Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2005-09-20
2005-09-20
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S050000, C257S529000
Reexamination Certificate
active
06946719
ABSTRACT:
The invention provides for a vertically oriented junction diode having a contact-antifuse unit in contact with one of its electrodes. The contact-antifuse unit is formed either above or below the junction diode, and comprises a silicide with a dielectric antifuse layer formed on and in contact with it. In preferred embodiments, the silicide is cobalt silicide, and the antifuse preferably silicon oxide, silicon nitride, or silicon oxynitride grown on the colbalt silicide. The junction diode and contact-antifuse unit can be used as a memory cell, which is advantageously used in a monolithic three dimensional memory array.
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Herner S. Brad
Petti Christopher J.
Huynh Andy
Matrix Semiconductor, Inc
Matrix Semiconductor, Inc.
Squyres Pamela J.
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