Minimally spaced gates and word lines

Details Minimally spaced gates and word lines Minimally spaced gates and word lines

2005-01-18

2005-01-18

Elms, Richard (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S517000

Reexamination Certificate

active

06844594

ABSTRACT:
A method of forming minimally spaced word lines is described. A double exposure technique is employed at the gate formation level. A small trench is defined through gate stack layers by using a tapered etch or spacers to achieve the desired width of the trench. A filler material fills the trench and forms a filler plug. The gate layers adjacent to the trench are then patterned and etched and the filler plug is removed to obtain gate stacks spaced apart by a distance of less than about 400 Angstroms.

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