Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode
Reexamination Certificate
2005-07-05
2005-07-05
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Bidirectional rectifier with control electrode
C257S079000, C257S086000, C257S102000, C257S103000, C313S506000
Reexamination Certificate
active
06914272
ABSTRACT:
P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 Ωcm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.
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Camras Michael D.
Chen Changhua
Christenson Gina L.
Goetz Werner K.
Kern R. Scott
Leiterman Rachel V.
Lumileds Lighting U.S. LLC
Nelms David
Nguyen Dao H.
Patent Law Group LLP
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