4. Active solid-state devices (e.g., transistors, solid-state diode
  5. With specified dopant
  6. Deep level dopant

Changhua Chen

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Epitaxial material grown laterally within a trench and...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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Formation of Ohmic contacts in III-nitride light emitting...

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode
Reexamination Certificate

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Formation of ohmic contacts in III-nitride light emitting...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate

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InGaN/AlGaN/GaN multilayer buffer for growth of GaN on sapphire

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch
Reexamination Certificate

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InGaN/AlGaN/GaN multilayer buffer for growth of GaN on sapphire

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch
Reexamination Certificate

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Profile ID: LFUS-PAI-P-1128162

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