Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-01-25
2005-01-25
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S548000, C257S299000, C257S540000, C257S275000, C438S238000, C438S279000, C438S280000
Reexamination Certificate
active
06847084
ABSTRACT:
A semiconductor device comprises a semiconductor substrate, a first circuit formed on the substrate, and a second circuit connected to the first circuit as an input/output portion thereof and powered by a voltage higher than that for the first circuit, the first circuit including a first and a second field-effect transistor, the first drain region of the first transistor accompanying a first load capacitance, the second drain region of the second transistor accompanying a second load capacitance smaller than the first load capacitance, and the first gate insulation film of the first transistor having an average relative dielectric constant higher than that of the second gate insulation film of the second transistor, thereby realizing a high operation speed.
REFERENCES:
patent: 5818099 (1998-10-01), Burghartz
patent: 2002-16063 (2002-01-01), None
patent: 2000-307010 (2002-11-01), None
G. Lucovsky, et al., “Microscopic Model for Enhanced Dielectric Constants in Low Concentration SiO2-Rich Noncrystalline Zr and Hf Silicate Alloys”, Applied Physics Letters, vol. 77, No. 18, Oct. 30, 2000, pp. 2912-2914.
Angus I. Kingon, et al., “Alternative Dielectrics to Silicon Dioxide for Memory and Logic Devices”, Nature, vol. 406, Aug. 31, 2000, pp. 1032-1038.
Nishiyama Akira
Ono Mizuki
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Wojciechowicz Edward
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