Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Reexamination Certificate
2001-11-09
2004-02-03
Ashton, Rosemary (Department: 1752)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
C430S326000, C430S907000, C526S242000, C526S321000
Reexamination Certificate
active
06686123
ABSTRACT:
BACKGROUND
1. Technical Field
Photoresist monomers, polymers thereof and photoresist compositions containing the same are disclosed. In particular, photoresist monomers suitable for a photolithography process using DUV (deep ultraviolet) light sources such as VUV (157 nm) and EUV (13 nm) in fabricating a minute circuit for a high integration semiconductor device, photoresist polymers thereof and photoresist compositions containing the same, and preparation processes therefore are disclosed.
2. Description of the Prior Art
In general, a useful photoresist for VUV has a variety of desired characteristics, such as low light absorbance at the wavelength of 157 nm, excellent etching resistance, and excellent adhesiveness to a wafer. In addition, a photoresist should be easily developable in a commercially readily available developing solution, such as 2.38 wt % and 2.6 wt % aqueous tetramethylammonium hydroxide (TMAH) solution.
Recently, there has been much research done on resins having a high transparency at the wavelength of 193 nm and dry etching resistance similar to novolac resin. However, most of the photoresists are not suitable for VUV due to their poor transmittance at 157 nm wavelength.
Photoresists containing fluorine and silicon have good transmittance at these wavelengths. Unfortunately, most photoresists containing fluorine with a polyethylene or polyacrylate polymer backbone have weak etching resistance, low solubility in an aqueous TMAH solution and poor adhesiveness to the silicon wafer.
On the other hand, photoresists containing silicon require a 2-step etching process of HF treatment and O
2
treatment. And it is difficult to remove HF completely, which makes these types of photoresists unsuitable to be applied into production.
However, polyethylene or polyacrylate resins comprising fluorine having excellent solubility have been recently developed. Nevertheless, such resins have low adhesiveness to a wafer, low etching resistance and high light absorbance for applying to resist.
SUMMARY OF THE DISCLOSURE
Novel photoresist monomers and polymers thereof that can be used for a light sources such as VUV (157 nm) and EUV (13 nm) are disclosed.
A photoresist composition comprising the photoresist polymer described above is also disclosed.
A semiconductor element produced by using the photoresist composition described above.
REFERENCES:
patent: 4027081 (1977-05-01), Turner
patent: 4983495 (1991-01-01), Tsutsumi et al.
patent: 5085975 (1992-02-01), Mueller
patent: 6511787 (2003-01-01), Harada et al.
US 2003/0036016 A1, Feb. 2003 Szmanda et al.*
US 2002/0160297 A1, Oct. 2002 Fedynyshyn et al.*
US 2002/0164538 A1, Nov. 2002 Allen et al.*
US 2002/0058198 A1, May 2002 Klauck-Jacobs et al.*
US 2002/0051940 A1, May 2002 Lee et al.
Jung Jae Chang
Jung Min Ho
Lee Geun Su
Ashton Rosemary
Hynix Semiconductor Inc
Marshall & Gerstein & Borun LLP
LandOfFree
Photoresist monomer, polymer thereof and photoresist... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Photoresist monomer, polymer thereof and photoresist..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photoresist monomer, polymer thereof and photoresist... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3335626