Memory cell with a capacitive structure as a control gate...

Details Memory cell with a capacitive structure as a control gate... Memory cell with a capacitive structure as a control gate...

2003-01-30

2004-10-19

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S316000, C257S357000, C257S369000, C438S257000, C438S396000, C438S688000, C438S689000, C438S526000, C438S745000

Reexamination Certificate

active

06806529

ABSTRACT:

FIG. 1
is a cross-sectional view illustrating an example of a memory cell
100
in accordance with the present invention.
FIGS. 2A-2C
are cross-sectional views illustrating an example of a method of forming a memory cell in accordance with the present invention.
FIGS. 3A-3B
are views illustrating an example of a memory cell
300
in accordance with the present invention.
FIGS. 4A-4C
are cross-sectional views illustrating an example of a method of forming a memory cell in accordance with the present invention.
FIGS. 5A and 5B
are views illustrating an example of a memory cell
500
in accordance with the present invention.
FIG. 5C
is a cross-sectional view illustrating an example of a memory cell
600
in accordance with the present invention.
FIGS. 6A-6F
are cross-sectional views illustrating an example of a method of forming a memory cell in accordance with the present invention.
FIGS. 7A-7C
are views illustrating an example of a memory cell
700
in accordance with the present invention.
FIGS. 8A-8F
are cross-sectional views taken along line
7
C-
7
C of
FIG. 7A
illustrating an example of a method of forming a memory cell in accordance with the present invention.


REFERENCES:
patent: 5761126 (1998-06-01), Chi et al.
patent: 6528842 (2003-03-01), Luich et al.
Dae M. Kim et al., “Stacked Gate Mid-Channel Injection Flash EEPROM Cell-Part 1: Programming Speed and Efficiency Versus Device Structure”, IEEE Transactions on Electron Devices, vol. 45, No. 8, Aug. 1998, pps. 1696-1702.

Affiliated with

Also associated with

Rating

Memory cell with a capacitive structure as a control gate... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory cell with a capacitive structure as a control gate..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory cell with a capacitive structure as a control gate... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3308070