Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-02-29
1998-01-13
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257356, 257362, 257546, H01L 2362
Patent
active
057082898
ABSTRACT:
A protection structure and method are provided for protecting a first pad of an integrated circuit, the integrated circuit having a second pad to receive a first supply voltage. The protection structure includes a first region of a first conductivity type coupled to the first pad; a second region of a second conductivity type coupled to the second pad; a substrate of the second conductivity type contacting the first and second regions; and an epitaxial layer of the first conductivity type. The epitaxial layer has an epitaxial region that contacts the first and second regions. A first diode can be formed outside the substrate between the first and second pads through at least two of the first region, the second region, and the epitaxial region. The protection structure may include a first portion and a second portion, wherein each portion has a different voltage threshold. Accordingly, the first diode can be formed through the second portion, but not the first portion. Hence, the protection structure will not cause interference to a sensitive component adjacent the first portion.
REFERENCES:
patent: 4736271 (1988-04-01), Mack et al.
French Search Report from French Patent Application 92 08280, filed Jun. 25, 1992.
International Electron Devices Meeting, Dec. 1990, San Francisco, CA US, pp. 799-802, XP279627, M.P. Masaquelier et al., "Method Of Internal Overvoltage Protection and Current Limit For A Lateral PNP Transistor Formed by Polysilicon Self-Aligned Emitter and Base, with Extended Collector".
Patent Abstracts of Japan, vol. 13, No. 220 (E-762) (2568) May 23, 1989, & JP-A-10 32 66 Mitsubishi Feb. 2, 1989.
Galanthay Theodore E.
Jorgenson Lisa K.
Morris James H.
SGS-Thomson Microelectronics Inc.
Tran Minh-Loan
LandOfFree
Pad protection diode structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Pad protection diode structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pad protection diode structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-329059