Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-07-25
1996-04-16
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257332, 257347, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
055085458
ABSTRACT:
A semiconductor device including a pair of transistors, comprises: a semiconductor substrate; a pair of gate electrodes formed in one surface of the semiconductor substrate at first portions thereof, respectively, and spaced from each other with a second portion of the semiconductor substrate therebetween; and two spaced source/drain diffused regions formed in the second portion of the semiconductor substrate and insulated from the gate electrodes. Each pair of transistors is formed of one of the gate electrodes, the source/drain diffused regions which are common to the pair of transistors, and a part of the second portion of the semiconductor substrate disposed between the source/drain diffused regions serving as a channel region common to the pair of transistors.
REFERENCES:
patent: 4194283 (1980-03-01), Hoffman
patent: 4942445 (1990-07-01), Baliga et al.
patent: 4961100 (1990-10-01), Baliga et al.
Design of CMOS VLSI, Baifukan, Apr. 1989, pp. 18-21.
Holmes et al, "V-Groove MOS (VMOS) . . . " Solid State Electronics, pp. 775-776, 1977.
Meier Stephen D.
Nippon Steel Corporation
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