Reduction of charge loss in nonvolatile memory cells by phosphor

Details Reduction of charge loss in nonvolatile memory cells by phosphor Reduction of charge loss in nonvolatile memory cells by phosphor

1997-08-25

1999-08-17

Chaudhuri, Olik

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438143, H01L 2100

Patent

active

059407352

ABSTRACT:
A semiconductor device formed in a semiconductor substrate with a low hydrogen content barrier layer formed over the semiconductor device. The barrier layer is implanted with phosphorus ions. The semiconductor device may have a hydrogen getter layer formed under the barrier layer. The barrier layer is a high temperature PECVD nitride film, a high temperature PECVD oxynitride film or a high temperature LPCVD nitride film. The hydrogen getter layer is P-doped film having a thickness between 1000 and 2000 Angstroms and is a PSG, BPSG, PTEOS deposited oxide film, or BPTEOS deposited oxide film. Interconnects are made by a tungsten damascene process.

REFERENCES:
patent: 5591659 (1997-01-01), Ema et al.
patent: 5770498 (1998-06-01), Becker
patent: 5792681 (1998-08-01), Chang et al.
patent: 5831899 (1998-11-01), Wang et al.
R.C.Sun, J.T. Clemens and J.T.Nelson, "Effects of Silicon Nitride Encapsulation of MOS Device Stablilty," 1980 IEEE.
J. Givens, S. Geissler, O.Cain, W.Clark, C. Koburger, J.Lee, "A Low-Temperature Local Interconnect Process in a 0.25-micrometer-Channel CMOS Logic Technology with Shallow Trench Isolation," Jun. 7-8, 1994 VMIC Conference 1994 ISMIC-103/94/0043.

Affiliated with

Also associated with

Rating

Reduction of charge loss in nonvolatile memory cells by phosphor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Reduction of charge loss in nonvolatile memory cells by phosphor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reduction of charge loss in nonvolatile memory cells by phosphor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-325225