Method of forming a contact hole of a semiconductor device

Details Method of forming a contact hole of a semiconductor device Method of forming a contact hole of a semiconductor device

1996-12-20

1999-08-17

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438640, 438713, H01L 21461

Patent

active

059407301

ABSTRACT:
The present invention relates to a method of forming a contact hole of a semiconductor device, and discloses a method of forming a contact hole of a semiconductor device which can remove an oxide film formed on the bottom of the contact hole, and make the edge portions of the entrance to the contact hole and reduce the topology of the contact hole by performing high frequency plasma etching processes in two stage in which the condition of pressure and electric power are different.

REFERENCES:
patent: 4764245 (1988-08-01), Grewal
patent: 4902377 (1990-02-01), Berglund et al.
patent: 5013400 (1991-05-01), Kurasaki et al.
patent: 5203957 (1993-04-01), Yoo et al.
patent: 5371042 (1994-12-01), Ong
patent: 5441595 (1995-08-01), Yamagata et al.
patent: 5453403 (1995-09-01), Meng et al.

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