Nitridation assisted polysilicon sidewall protection in self-ali

Details Nitridation assisted polysilicon sidewall protection in self-ali Nitridation assisted polysilicon sidewall protection in self-ali

1998-07-20

1999-08-17

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438444, 438445, 257506, H01L 2176

Patent

active

059407182

ABSTRACT:
A method for fabricating a semiconductor device including a silicon substrate and plural silicon stacks thereon includes forming a nitride shield layer on the substrate and stacks to cover the stacks, such that the stacks are protected from loss of critical dimension during subsequent isolation trench formation and oxidation. In other words, the edge of each stack, and thus the critical dimension of the silicon layers of the stack, is protected from oxidation by the nitride shield layer.

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