Method for forming a thin film

Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma

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427250, 427253, 4272552, 4272555, 4272557, 427294, 427314, 4273741, 427379, 4273831, 4273981, 427404, 4274197, 427573, 427575, 427576, 427585, 427595, H05H 102

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055080669

ABSTRACT:
In order to decompose TiCl.sub.4 to Ti and Cl completely, extremely high energy of more than 400 kcal mol.sup.-1 is required.
In the method according to the present invention, use of unequilibrium plasma under reduced pressure is noticed, and it is especially noticed that in the plasma generated by resonance phenomenon, there are high energy electrons, which collide and enhance decomposition and reduction. Therefore, itis possible to form a Ti film without such high substrate temperature as 2000.degree. C., and more, to form a Tifilm with good step coverage even in a fine contact hole.

REFERENCES:
Patent Abstracts of Japan, vol. 13, No. 549 (p. 103, C-662) Dec. 7, 1989, abstract.
Patent Abstracts of Japan, vol. 13, No. 394 (p. 145, C-631) Aug. 31, 1989, abstract.
European Search Report dated Jan. 7, 1993.

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