Electron microscope equipped with electron biprism

Radiant energy – Inspection of solids or liquids by charged particles – Electron microscope type

Reexamination Certificate

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Details

C250S492300

Reexamination Certificate

active

06759656

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to an electron microscope equipped with an electron biprism for obtaining information about the thickness distribution across a sample, an electric field distribution possessed by a sample, a magnetic field distribution possessed by a sample, or other similar information.
2. Description of the Related Art
In the prior art transmission electron microscope, an electron beam is directed to a sample. A sample image consisting of an electron beam transmitted through the sample is magnified by a magnetic lens and projected onto a screen, thus permitting observation of the sample.
An electron microscope equipped with an electron biprism is included in such conventional transmission electron microscopes. In this electron microscope, the electron biprism produces carrier fringes owing to interference of the electron beam not transmitted through the sample with the electron beam transmitted through the sample. The carrier fringes overlap the image of the electrons transmitted through the sample, giving rise to a hologram. The thickness distribution across the sample, an electric field distribution possessed by the sample, a magnetic field distribution possessed by the sample, or other information is obtained by observing the hologram on a screen.
FIG. 2
schematically shows a conventional electron microscope equipped with such an electron biprism. FIGS.
3
(
a
) and
3
(
b
) illustrate the electron biprism. FIG.
3
(
a
) indicates the state in which the electron biprism has been turned off, and FIG.
3
(
b
) indicates the state in which the biprism has been turned on.
In FIGS.
2
and
3
(
a
) and
3
(
b
), an electron microscope
1
has an electron gun
3
emitting an electron beam
2
. The electron beam emitted by the electron gun
3
is accelerated by an accelerating portion
4
. An illumination system
5
directs the electron beam
2
to a sample
6
after appropriately converging or diverging the beam
2
. An objective lens
7
focuses a sample image originating from the electron beam transmitted through the sample
6
. An electron biprism
8
is used to create a hologram. A line electrode
8
a
consists of a conductive wire having a diameter of about 0.3 to 0.6 &mgr;m, the wire being stretched perpendicular to the electron beam path. A voltage source
8
b
applies a voltage of tens to hundreds of volts, for example, to the line electrode
8
a
. A switch
8
c
is connected across the voltage source
8
b
. Grounding electrodes
8
d
and
8
e
extend parallel to the line electrode
8
a
and are located on the opposite sides of the line electrode
8
a
. The grounding electrodes
8
d
and
8
e
regulate the electric field produced around the line electrode
8
a
. A focusing system
9
includes the electron biprism
8
. In this focusing system
9
, a hologram created by the electron biprism
8
is magnified by plural stages of magnetic lenses
10
and focused onto a screen
11
. A transmission electron image of the sample
6
is indicated by
12
. The optical axis of the electron beam is indicated by O. The line electrode
8
a
produces a shadow S.
In the electron microscope
1
equipped with the electron biprism
8
constructed in this way, when the electron biprism has been turned off, the switch
8
c
is thrown to the ground side as shown in FIG.
3
(
a
). Under this condition, the voltage of the voltage source
8
b
is not applied to the line electrode
8
a;
ground potential is applied to the line electrode
8
a
.
When the electron beam
2
emitted by the electron gun
3
hits the sample
6
, the electron beam
2
a
not transmitted through the sample
6
and the electron beam
2
b
transmitted through the sample
6
are converged by the objective lens
7
. Then, this converged beam
2
passes through the electron biprism
8
located under the objective lens
7
. Since ground potential is given to the line electrode
8
a
, electrons
2
from the objective lens
7
are not deflected by the line electrode
8
a
during passage through the electron biprism
8
.
Therefore, as shown in FIG.
3
(
a
), the transmission electron image
12
of the sample
6
and the shadow S of the line electrode
8
a
are separated and projected onto the screen
11
. At this time, the position of the sample
6
is adjusted and the angular position of the line electrode is adjusted by a rotary mechanism so that the transmission electron image of the sample
6
is formed only on one side of the shadow S of the line electrode.
On the other hand, when a hologram consisting of a TEM image of the sample
6
on which carrier fringes are superimposed is observed, the switch
8
c
is thrown to the side of the voltage source
8
b
as shown in FIG.
3
(
b
) to turn on the electron biprism
8
. Under this condition, a positive voltage from the voltage source
8
b
is applied to the line electrode
8
a
. Electron beam parts which are converged by the objective lens
7
and hit on the opposite sides of the line electrode
8
a
in the same way as in the foregoing process are attracted toward the center by the positive voltage from the voltage source
8
b
. The beam parts are made to overlap each other in a lower position, thus creating carrier fringes. These carrier fringes are made to overlap the TEM image
12
, creating a hologram. The hologram is enlarged by the focusing system
9
and projected onto the screen
11
. By observing this hologram, the thickness distribution across the sample
6
, an electric field distribution possessed by the sample, or a magnetic field distribution possessed by the sample can be obtained as information about variations in phase of the electron beam.
The electron microscope equipped with the aforementioned electron biprism has an excellent feature that allows the user to take the distribution of electric or magnetic field possessed by the sample
6
as information about variations in phase of the electron beam
2
. Where a magnetic field distribution possessed by a sample is examined, if it is a magnetic sample, then it is necessary to place the sample
6
in a space where the effects of magnetic field can be neglected.
In the above-described conventional electron microscope
1
, the sample
6
is placed in a strong magnetic field set up by the objective lens
7
and so it is necessary to turn off the objective lens
7
in examining the magnetic field distribution possessed by the sample if it is magnetic in nature.
However, the objective lens
7
plays a role for forming a crossover point P of the electron beam in an appropriate position between the sample
6
and the electron biprism
8
as shown in FIGS.
3
(
a
) and
3
(
b
), i.e., plays a role for forming a light source P for the electron biprism
8
. The objective lens
7
further serves to form a TEM image of the sample in an appropriate position behind the electron biprism
8
. Therefore, if the objective lens
7
is turned off, it is difficult to appropriately set the focal points of the light source P and hologram relative to the biprism
8
. In addition, it is impossible to vary the magnification of the TEM image of the sample on the hologram-focused plane.
On the other hand, the spacing of the carrier fringes can be varied by the voltage applied to the biprism line electrode
8
a
. If the spacing of the fringes is narrowed in order to enhance the resolution of phase information, the contrast of the carrier fringes deteriorates. As a result, the signal-to-noise ratio of the obtained phase information becomes impaired.
Accordingly, in the conventional electron microscope shown in
FIG. 2
, the ratio of the magnification of the TEM image of the sample in the objective image plane to the spacing of the interference fringes is required to be variable to obtain phase information at the highest signal-to-noise ratio under the desired resolution, for the following reason. If the spacing of the interference fringes is finely controlled, the image contrast can be enhanced by controlling the magnification of the TEM image of the sample in the objective i

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