Ferroelectric memory device using a ferroelectric material and m

Details Ferroelectric memory device using a ferroelectric material and m Ferroelectric memory device using a ferroelectric material and m

1998-06-19

1999-08-17

Nelms, David

Static information storage and retrieval

Systems using particular element

Ferroelectric

365210, 3651852, 36518904, G11C 1122

Patent

active

059403160

ABSTRACT:
A ferroelectric memory device hardly affected by variations in characteristic of a ferroelectric capacitor is provided. Capacitors in two dummy memory cells are used such that one capacitor is a ferroelectric capacitor and always outputs a voltage corresponding to "0" while the other capacitor outputs a voltage corresponding to a sensitivity of a sense amplifier, both of the voltages are collectively used as a reference voltage.

REFERENCES:
patent: 5297077 (1994-03-01), Imai et al.
patent: 5621680 (1997-04-01), Newman et al.

Affiliated with

Also associated with

Rating

Ferroelectric memory device using a ferroelectric material and m does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ferroelectric memory device using a ferroelectric material and m, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferroelectric memory device using a ferroelectric material and m will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-321259