Magnetic tunneling junction with improved power consumption

Details Magnetic tunneling junction with improved power consumption Magnetic tunneling junction with improved power consumption

2002-07-09

2004-03-16

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S294000

Reexamination Certificate

active

06707083

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates to magnetic system, and more particularly to a method and system for providing magnetic tunneling junctions having improved reliability.
BACKGROUND OF THE INVENTION
Because of their high magnetoresistance ratio, spin dependent tunneling sensors, otherwise known as magnetic tunneling junctions (MTJs), are currently of interest for use in a variety of devices, including magnetic memories such as magnetic random access memories (MRAM).
FIG. 1
depicts a portion of a conventional magnetic memory, a conventional MRAM
1
. The conventional MRAM
1
includes MTJs
10
. Each MTJ
10
includes at least a conventional pinned layer
20
, a conventional barrier layer
30
and a conventional free layer
40
. The conventional barrier layer
30
is typically an insulator that serves as a tunneling barrier between the conventional pinned layer
20
and the conventional free layer
40
. The conventional pinned layer
20
and the conventional free layer
40
are ferromagnetic. The magnetization of the conventional pinned layer
20
is pinned in a particular direction, generally by an anitiferromagnetic layer (not shown). The magnetization of the conventional free layer
40
is free to rotate in response to an external field. The conventional MRAM
1
includes a conventional bit line
60
and a conventional bottom lead
50
. Current through the MTJ
10
is carried by the conventional bit line
60
and the conventional bottom lead
50
. The magnetic MTJ
10
is switched using a combination of current driven through the bit line
60
and the magnetic tunneling junction
10
and the current through the corresponding digit line
70
.
FIG. 2
is a diagram of a cross-sectional view of a portion of the magnetic memory
1
. A magnetic tunneling junction
10
having the pinned layer
20
, barrier layer
30
and free layer
40
are shown. The magnetic tunneling junction
10
is surrounded by an insulator (not explicitly shown). The magnetic tunneling junction typically includes an antiferromagnetic layer (not shown) and other layers, such as seed and/or capping layers. The bit line
60
is typically composed of a nonmagnetic conductive material, such as Cu. In order to switch the direction of magnetization of the magnetization of the free layer
40
, current is driven through the bit line
60
and the digit line
70
(not shown in FIG.
2
).
Although the conventional MRAM
1
functions, one of ordinary skill in the art will readily recognize that the conventional MRAM
1
consumes a great deal of power. In particular, a relatively large current is required in order to switch the magnetization of the free layer. As a result, a large amount of power is also consumed in order to switch the magnetization of the free layer
40
. Consequently, the MRAM
1
utilizes a large amount of power when programming an MTJ
10
.
Accordingly, what is needed is a system and method for decreasing the amount of power utilized by an MRAM. The present invention addresses such a need.
SUMMARY OF THE INVENTION
The present invention provides a method and system for providing a magnetic tunneling junction. The method and system comprise providing a free layer, a pinned layer, and a barrier between the free layer and the pinned layer. The free layer and the pinned layer are ferromagnetic. The barrier layer is an insulator. The magnetic tunneling junction is coupled to a bit line. The bit line includes a ferromagnetic liner and a nonmagnetic core. The nonmagnetic core includes a top, a bottom and sides. The ferromagnetic liner includes at least one tab and is adjacent to the sides and a portion of the bottom of the nonmagnetic core. The at least one tab is adjacent to the portion of the bottom of the nonmagnetic core.
According to the system and method disclosed herein, the present invention provides a magnetic tunneling junction that can be programmed using less power.


REFERENCES:
patent: 4240439 (1980-12-01), Abe et al.
patent: 6174737 (2001-01-01), Durlam et al.
patent: 6322640 (2001-11-01), Xiao et al.
patent: 6548849 (2003-04-01), Pan et al.
patent: 2001/0050859 (2001-12-01), Schwarzl
patent: 2002/0141232 (2002-10-01), Saito et al.

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