Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-10-15
1998-10-13
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
058215786
ABSTRACT:
A floating gate (FG) of a ferroelectric transistor (FTR11) and a source (SS) of a selecting transistor (STR11) are interconnected. A control gate (FCG) of the ferroelectric transistor (FTR11) is connected to a word line (WL1), a drain (SD) of the selecting transistor (STR11) is connected to a bit line (BL11), and a gate (SG) of the selecting transistor (STR11) is connected to a gate line (G). In the writing mode, "5V" is given to the gate line (G) to set the selecting transistors (STR11, . . . ) to the on state. A ferroelectric layer (FM) is polarized by giving a suitable voltage to the word lines (WL1, . . . ) and the bit lines (BL1, . . . ). In the operation mode, "0V" is given to the gate line (G) to set the selecting transistors (STR11, . . . ) to the off state.
REFERENCES:
patent: 4870615 (1989-09-01), Maruyama et al.
patent: 5081375 (1992-01-01), Pickett et al.
patent: 5309392 (1994-05-01), Ootsuka et al.
patent: 5365094 (1994-11-01), Takasu
patent: 5412600 (1995-05-01), Nakajima
patent: 5541870 (1996-07-01), Mihara et al.
Meier Stephen
Rohm & Co., Ltd.
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