Field effect transistor having an arched gate and manufacturing

Details Field effect transistor having an arched gate and manufacturing Field effect transistor having an arched gate and manufacturing

1996-10-17

1998-10-13

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

H01L 2978

Patent

active

058215735

ABSTRACT:
An arched gate MOSFET having first and second source/drain regions formed spaced apart on a main surface of the semiconductor substrate, and a gate electrode formed on said main surface of the semiconductor substrate through an insulating film. The gate electrode extends in a first direction between the first and second source/drain regions defining a channel length, and in a second direction, perpendicular to the first direction, defining a channel width. The surface of the semiconductor substrate is arcuate in shape in the channel width direction and the gate electrode conforms to the arcuate shape of the surface of the semiconductor substrate.

REFERENCES:
patent: 4324038 (1982-04-01), Chang et al.
patent: 4590504 (1986-05-01), Guterman
patent: 4740827 (1988-04-01), Niitsu et al.
patent: 4910566 (1990-03-01), Ema
patent: 4952993 (1990-08-01), Okumura
patent: 5021847 (1991-06-01), Eitan et al.
patent: 5093273 (1992-03-01), Okumura
patent: 5177027 (1993-01-01), Lowrey et al.
patent: 5247197 (1993-09-01), Ema

Affiliated with

Also associated with

Rating

Field effect transistor having an arched gate and manufacturing does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field effect transistor having an arched gate and manufacturing , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistor having an arched gate and manufacturing will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-315224