Sense circuit for storage devices such as non-volatile memories,

Details Sense circuit for storage devices such as non-volatile memories, Sense circuit for storage devices such as non-volatile memories,

1991-11-13

1994-01-04

LaRoche, Eugene R.

Static information storage and retrieval

Read/write circuit

365207, 365210, G11C 700

Patent

active

052766446

ABSTRACT:
A non-volatile memory in which, during read operations, the sense amplifier's first input is connected not only to a selected non-programmed reference cell, but also to a current of a value one half the current that flows in a programmed cell; and the sense amplifier's second input is connected not only to a selected matrix cell to be read, but also to a current of a value one half the current that flows in a non-programmed cell.

REFERENCES:
patent: 4604732 (1986-08-01), van Tran
patent: 4670675 (1987-06-01), Donoghue
patent: 4713797 (1982-12-01), Morton et al.
patent: 4868790 (1989-09-01), Wilmoth et al.
patent: 4949307 (1990-08-01), Campardo
patent: 5091888 (1992-02-01), Akaogi
1990 Symposium on VLSI Circuits Digest of Technical Papers, "A 36 ns 1 Mbit CMOS EPROM with New Data Sensing Technique" by H. Nakai, K. Kanazawa, et al.

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