Thin film semiconductor device including a driver and a matrix c

Details Thin film semiconductor device including a driver and a matrix c Thin film semiconductor device including a driver and a matrix c

1995-05-15

1998-10-13

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438166, 438487, H01L 21336, H01L 2184

Patent

active

058211373

ABSTRACT:
A thin film transistor including a thin semiconductor film which has a central portion as a channel region, with the side portions of the semiconductor film except for the channel region being a source and a drain regions which includes n-type impurities such as phosphorus ions of high concentration (3.times.10.sup.15 atoms/cm.sup.2), and a low concentration region provided between the channel region and each of the source and drain regions including p-type impurities such as boron ions of a low concentration (1.times.10.sup.13 atoms/cm.sup.2) whereby the low concentration region serves to reduce the off current.

REFERENCES:
patent: 5145808 (1992-09-01), Sameshima et al.
patent: 5210438 (1993-05-01), Nakamura
patent: 5248623 (1993-09-01), Muto et al.
patent: 5397718 (1995-03-01), Furuta et al.
patent: 5420048 (1995-05-01), Kondo
patent: 5432122 (1995-07-01), Chae
patent: 5496768 (1996-03-01), Kudo
patent: 5529630 (1996-06-01), Imahashi et al.
patent: 5529951 (1996-06-01), Noguchi et al.
patent: 5561081 (1996-10-01), Takenouchi et al.
Wagner et al., Formation of p-n Junctions and Silicides Using a High Performance Laser Beam Homogenization System, Applied Surface Science, vol. 43, 1989, pp. 260-263.
Jhon et al., Crystallization of Amorphous Silicon by Excimer Laser Annealing With a Line Shape Beam Having a Gaussian Profile, Jpn. J. Appl. Phys., vol. 33, 1994, pp. L 1438-L 1441, Part 2, No. 10B, 15 Oct. 1994.

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