Apparatus and method for manufacturing semiconductor single crys

Details Apparatus and method for manufacturing semiconductor single crys Apparatus and method for manufacturing semiconductor single crys

1997-10-23

1999-08-17

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 32, 117201, 117917, C30B 1522

Patent

active

059388366

ABSTRACT:
This invention provides an apparatus and a method for manufacturing semiconductor single crystals, which enable a steady process of pulling up high-quality single silicon crystals to be easily performed during the growing of silicon single crystals by the CZ method aided by applying a Cusp magnetic field. Three facing homopolar magnets (hereinafter referred to as magnet) 1, 2, and 3 arc disposed outside the single-crystal pulling up chamber. The magnet 3 is located at the same height as the free surface of the melt 6 stored in a quartz crucible as the free surface of the melt 6 stored in a quartz crucible 5. Furthermore, the strength of the magnets 3 is set to be weaker than that of the magnets 1 and 2. The flux lines of the magnets 3 substantially pass through the quartz crucible 5 in the horizontal direction. However, the flux lines of the magnet 3 do not reach the silicon single crystal 7 being pulled up. The flux lines perpendicular to the free surface of the melt 6 and the strength of the magnetic field near the growth boundary of the crystal are reduces. Thus, the amount of oxygen coming from the quartz crucible 5 and convection near the free surface of the melt 6, starting from the quartz crucible 5 toward the silicon single crystal, can be minimized.

REFERENCES:
patent: 4522790 (1985-06-01), Dantzig et al.
patent: 4592895 (1986-06-01), Matsutani et al.
patent: 4818500 (1989-04-01), Boden et al.
patent: 4830703 (1989-05-01), Matsutani
patent: 5009865 (1991-04-01), Boden et al.

Affiliated with

Also associated with

Rating

Apparatus and method for manufacturing semiconductor single crys does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus and method for manufacturing semiconductor single crys, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and method for manufacturing semiconductor single crys will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-311676