Field effect transistor of high breakdown voltage type having st

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257345, 257368, H01L 2994, H01L 31113

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056635877

ABSTRACT:
An FET having a high breakdown voltage comprises a P type semiconductor substrate (5), a plurality of pairs of source regions (S) and drain regions (D) each comprising N.sup.- impurity layers (3) formed in the substrate, gate electrodes (9) each formed through an insulating film over a region interposed between each of the source regions and each of the drain regions, N.sup.+ impurity diffused layers (4) formed, shifted by a constant dimension in the N.sup.- impurity diffused layers, a source terminal (7a) connecting a plurality of source regions and a drain terminal (7b) connecting a plurality of drain regions in the plurality of pairs such that a dimensional error caused by shifting is compensated for.

REFERENCES:
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Ohta et al, IEEE J. of Solid State Circuits, vol. SC-10, No. 5, Oct. 1975, p. 314.
Plummer et al., "A Monolithic 200-V CMOS Analog Switch", (IEEE Journal of Solid-State Circuits, Dec. 1976), pp. 145-148.
"Analog CMOS Building Blocks for Custom and Semicustom Applications," by Dona C. Stone et al., IEEE Journal of Solid-State Circuits, vol. SC-19, No. 1, Feb. 1984, pp. 55-61.
"Integrated Circuits Design Principles," Warner, Fordemwalt, McGraw Hill Book Company, 1965, pp. 223-228.
"A Coplanar CMOS Power Switch," by Ernst Habekotte et al., IEEE Journal of Solid-State Circuits, vol. SC-16, No. 3, Jun. 1981, pp. 212-225.
"A GaAs Monolithic Low-Noise Broad-Band Amplifier," by John A. Archer et al., IEEE Journal of Solid-State Circuits, vol. SC-16, No. 6, Dec. 1981, pp. 648-652.
"A Family of Differential NMOS Analog Circuits for a PCM Codec Filter Chip," by Daniel Senderowicz et al., IEEE Journal of Solid-State Circuits, vol. SC-17, No. 6, Dec. 1982, pp. 1014-1023.

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