Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-04-10
1999-02-23
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257522, H01L 2978
Patent
active
058747656
ABSTRACT:
An MOSFET (metal oxide semiconductor field effect transistor) and a method for fabricating the same in which charge trap is prevented at sidewall spacer of a gate insulating film are disclosed, the MOSFET including a gate insulating film and a gate electrode successively formed on a semiconductor substrate of first conductivity type; an insulating sidewall spacer formed on sides of the gate electrode; a vacuum region formed between the semiconductor substrate and the insulating sidewall spacer; and source/drain regions formed beneath surface of the semiconductor substrate at side of the gate electrode.
REFERENCES:
patent: 5324683 (1994-06-01), Fitch et al.
patent: 5736446 (1998-04-01), Wu
patent: 5770507 (1998-06-01), Chen et al.
M. Togo et al., "A Gate-side Air-gap Structure (GAS) to Reduce the Parasitic Capacitance in MOSFETs", 1996 Symposium on VLSI Technology, Digest of Technical Papers, Jun. 1996, pp. 38-39.
Lee Sang Don
Yang Woun S
Hardy David B.
LG Semicon Co. Ltd.
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