Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-07-24
1999-02-23
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257207, 257211, H01L 27118
Patent
active
058747648
ABSTRACT:
An improved design for high aspect ratio MOS devices is capable of 100% yields. The design is suitable for low voltage CMOS devices, such as microprocessors, which use the high aspect ratio MOS devices in embedded applications, and for HEMTs in high frequency applications, such as high power microwave devices. The high yields reduce manufacturing costs. A modular MOS concept is introduced to realize the 100% yield of large channel width devices. The structure of the modular MOS device is a regular MOS device with a unit device channel width. This can be a multi-finger device which has a proper dimension to be able to fit in a given layout area. Therefore, the number of modules which are needed to form a full large width device is not only determined by module size, but also on the manufacturing yield record, allowed chip real estate and performance requirement.
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Chu Shao-Fu Sanford
Hsieh Chang-Ming
Hsu Louis Lu-Chen
Ratanaphanyarat Somnuk
Anderson Jay H.
Hardy David B.
International Business Machines - Corporation
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