OISF control in czochralski-grown crystals

Details OISF control in czochralski-grown crystals OISF control in czochralski-grown crystals

1994-05-09

1998-10-13

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C30B 1522

Patent

active

058206728

ABSTRACT:
A method for controlling oxygen-induced stacking faults (OISF) in a silicon crystal (12) grown according to the Czochralski silicon crystal growing technique includes the steps of forming a flared top portion (18) of the silicon crystal (12) to a predetermined diameter (20) and tapering (23) the silicon crystal (12) top portion (18) to produce a cylindrical portion (22) having a second predetermined diameter. The second predetermined diameter is smaller than the first predetermined diameter. Because of the inward taper (23) OISF concentrates in the flared top portion (18) of silicon crystal (12).

REFERENCES:
patent: 4040895 (1977-08-01), Patrick et al.
patent: 4417943 (1983-11-01), Jacques et al.

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