Method for manufacturing semiconductor device contact

Details Method for manufacturing semiconductor device contact Method for manufacturing semiconductor device contact

1991-10-21

1993-12-21

Maples, John S.

Fishing, trapping, and vermin destroying

437189, 437230, 427 98, 20419225, H01L 21441, H01L 2102

Patent

active

052721116

ABSTRACT:
An amorphous Ni-P layer which nullifies the effects of the crystallinity of a base metal layer is formed on the base metal layer in a metallic element of a field effect transistor by electroless plating. An electrolytic Au layer is deposited on the amorphous Ni-P layer. Thus, there are no luster nonuniformities in the electrolytic Au layer, whereby the position of an electrode pad or like metallic element is easily detected mechanically and automated bonding and packaging of the field effect transistor are simplified.

REFERENCES:
"Electroless Deposition as a Means of Obtaining Ohmic Contacts: Au/Pd Onto GaAs", D. Lamouche et al., Solid State Electronics, vol. 29, No. 6, pp. 625-632, 1986.
"Electroless Gold Plating on III-V Compound Crystals", L. A. D'Asaro et al., Journal of The Electrochemical Society, vol. 127, No. 9, pp. 1935-1940, Sep. 1980.
"Activation and Electroless Plating of Silicon Surfaces," A. F. Schemeckenbecher, IBM Technical Disclosure Bulletin, vol. 10, No. 12, p. 1972, May 1968.
"Plating for Semiconductor Devices", D. R. Turner, Fall Meeting of Electrochemical Society, vol. 72-2, pp. 499-500, Oct. 8-13, 1972.
"Amorphous Metal-Semiconductor Contacts for High Temperature Electronics--I", A. G. Todd et al., Solid State Electronics, vol. 27, No. 6, pp. 507-513, Jun. 1984.

Affiliated with

Also associated with

Rating

Method for manufacturing semiconductor device contact does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor device contact, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device contact will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-308793