Microwave plasma CVD method for coating a substrate with high th

Details Microwave plasma CVD method for coating a substrate with high th Microwave plasma CVD method for coating a substrate with high th

1992-09-30

1993-12-21

King, Roy

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427575, 427573, 427249, 427122, 427327, 423446, 156DIG68, 428408, 264334, B05D 306, C23C 1626

Patent

active

052719715

ABSTRACT:
A two-stage microwave plasma CVD process is disclosed for making a CVD diamond material, substantially free of voids, which has an average crystallite size greater than about 15 microns, a maximum intensity of the diamond Raman peak in counts/sec divided by the intensity of photoluminescence at 1270 cm.sup.-1 greater than about 3, a Raman sp.sup.3 full width half maximum less than about 6 cm.sup.-1 and a diamond-to-graphite Raman ratio greater than about 25.

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