Method for anisotropic etching in the manufacture of semiconduct

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156646, 156668, 156662, 250251, 250423R, 250423P, H01L 2100

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active

052718000

ABSTRACT:
Hydrocarbon polymer coatings used in microelectronic manufacturing processes are anisotropically etched by atomic oxygen beams (translational energies of 0.2-20 eV, preferably 1-10 eV). Etching with hyperthermal (kinetic energy>1 eV) oxygen atom species obtains highly anisotropic etching with sharp boundaries between etched and mask-protected areas.

REFERENCES:
patent: 4780608 (1988-10-01), Cross et al.
patent: 4828817 (1989-05-01), Outlaw
patent: 4961820 (1990-10-01), Shinagawa et al.
"Atomic Oxygen Beam Source for Orbital Environment Experiment"; Materials & Manufacturing Process; 5(3), 387-396, 1990, Cuthbertson et al.
Visentine, James T., "Atomic Oxygen Effects Measurements for Shuttle Missons STS-8 and 41-G," NASA Technical Memorandum 100459 vol. I, pp. 2-1/2 -10, Sep., 1988.
Visentine, James T., "Atomic Oxygen Effects Measurements for Shuttle Missions STS-8 and 41-G," NASA Techanical Memorandum 100459 vol. III, Sep., 1988.
Skidmore, J. A. et al. Journal of Vacuum Science Technology B6 (6), pp. 1885-1888, Nov./Dec., 1988.
Suzuki et al., Journal of Vacuum Science Technology A5 (4), pp. 1605-1606, Jul./Aug.; 1987.
Suzuki et al., Journal of Applied Physics, vol. 64 (7), pp. 3697-3705, Oct. 1, 1988.
Hartney, M. A. et al., Journal of Vacuum Science Technology B7 (1), pp. 1-13 Jan./Feb., 1989.
Yamada, H. et al., Journal of Vacuum Science Technology, B7 (2), pp. 175-180, Mar./Apr., 1989.
Geis, M. W. et al., Journal of Vacuum Science Technology A5 (4), pp. 1928-1929, Jul./Aug., 1987.

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