Method and apparatus for detecting defect on semiconductor subst

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156651, 156654, 156662, 156345, 252 795, H01L 21306, B44C 122

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active

052717968

ABSTRACT:
A method of detecting a defect on the surface of a semiconductor substrate, including: a first etching step of etching a semiconductor substrate by a first etching amount; a first check step of applying a beam to the surface of the substrate underwent the first etching step, and detecting a first reflected beam; a second etching step of etching the substrate etched by the first etching amount, by an additional etching amount, to make the total etching amount a second etching amount; a second check step of applying the beam to the surface of the substrate underwent the second etching step, and detecting a second reflected beam; and a calculation step of calculating the relation between the first and second reflected beams.

REFERENCES:
patent: 4243473 (1981-01-01), Yamaguchi et al.
Miyashita et al. (1991) Electrochem. Soc. Extended Abstracts 91-1:286-287, Abstract No. 204: Origin of Surface Micro Defect on Annealed Silicon Wafer.

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