Semiconductor device having at least one symmetrical pair of MOS

Details Semiconductor device having at least one symmetrical pair of MOS Semiconductor device having at least one symmetrical pair of MOS

1993-03-23

1995-02-14

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257390, 257401, 257618, 257653, 257773, H01L 2978

Patent

active

053898109

ABSTRACT:
A semiconductor device having at least one symmetrical pair of MOSFETs is provided. The device includes a semiconductor layer having an upper surface, an active region formed in the upper surface, an isolation region formed in the upper surface and enclosing the active region, and a pair of MOSFETs formed in the active region, wherein the pair of MOSFETs are symmetrical with respect to a first symmetric plane substantially vertical to the upper surface and also with respect to a second symmetric plane vertical both to the upper surface and to the first symmetric plane, each of the pair of MOSFETs includes a source region, a drain region, and a channel region formed in an upper surface of the active region, the source region is shared by the pair of MOSFETs, and the drain region is spatially isolated from the source region by the channel region.

REFERENCES:
Search Report for European Appl. 93104940.7 mailed Oct. 4, 1993.

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